Field programmable spin-logic realized with tunnelling-magnetoresistance devices

Abstract

Spin-dependent transport properties are already applied in hard disks, read heads, sensors and metallic magnetic random access memories. Large efforts currently concentrate on new spin-dependent functionalities using either metallic or tunnelling devices. Here, we show the possibility to realize field programmable spin-logic gates. For this purpose, we experimentally demonstrate the feasibility of a two input spin-logic gate, based on spin-dependent tunnelling elements, which can be separately programmed on-chip to form a logic NOR or a NAND function. Key factors in the spin-logic gate functionality and performance are identified from the measurements and are discussed.