Abstract

Wearable electronics are produced by depositing thin electroconductive layers with low resistance on flexible substrates. In the process of producing such metallic films, as well as during their usage, structural defects may appear which affect their electrical properties. In this paper, we present analytical and numerical models for understanding phenomena related to the electrical conductivity of thin electroconductive layers. The algorithm in the numerical model is based on the boundary integral equation method. The formulas enable calculation of the potential distribution and electric field strength of the analyzed structures, and describe the impact of cracks on their electrical resistance. The validity of the proposed models was verified by experimental results.

Highlights

  • Physical vapor deposition (PVD) is one of the best-known methods for producing thin metallic layers on various substrates

  • The purpose of this work was and to create analytical and on field theory enable analysis of phenomena occurring in thin layers, the impact of defects numerical modelsofbased on field theory to enable analysis of phenomena is occurring in thin layers, on the resistance textronic electroconducting paths

  • The defect in the analytical model has the shape of an ellipse arbitrarily oriented relative to the electric field, forcing the flow of current

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Summary

Introduction

Physical vapor deposition (PVD) is one of the best-known methods for producing thin metallic layers on various substrates. The PVD technique is a thin layer application process, whereby atom after atom is placed systematically and stochastically on the substrate, by the evaporation of the material from a heated source. Thin layers usually have a thickness ranging from atomic layers to several microns. The process changes both the surface properties and the transition zone between the substrate and the evaporated material. The common techniques for PVD of thin metallic layers are evaporation and atomization of droplets in a gaseous state. These techniques allow for precise deposition of particles on the substrate, while maintaining low pressure [1]. The larger the particle size, the lower the adhesion of the metallic layer to the substrate

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