Abstract
The electro-optical effects of GaAs-AlAs quantum wells coupled via a thin AlAs separating layer are studied theoretically and experimentally by absorption current spectroscopy. It has been found that such coupled quantum well structures exhibit unique absorption features that are different from isolated quantum wells, and large changes of the absorption coefficient are possible through the field induced decoupling effect involving both quantum well structures for electrons and holes. Application of the coupled quantum well structures in intensity modulators is also discussed. >
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