Abstract
In this research, we investigate electrically driven threshold switching (TS) characteristics in electrochemical metallization cells by adopting the field-induced nucleation theory. For this aim, Ag/HfO2 and Ag/TiO2 based TS devices are prepared and examined. First, we carry out the field driven turn-on process to form Ag filaments created as a consequence of sequential nucleation of Ag ions from the bottom electrode. During the filament formation process, it is observed that the prepared devices show switching time exponential in voltage and temperature with different nucleation barrier energies (W0), which confirms the field-induced nucleation theory. Furthermore, we find that the device with higher W0 shows faster dissolution speed. This implies that the slow turn-off speed of the TS device can be improved by finding a material system with a higher W0 value.
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