Abstract

Silicon waveguides embedded in lateral p-n junctions show field-induced optical nonlinearities. By properly polarizing the junction, these can be used to achieve electro-optic modulation through the Direct Current Kerr effect. In addition, these enable second-order nonlinear processes such as the electric-field-induced second harmonic generation (EFISHG). In this work, we study in detail electro-optic effects in integrated silicon microresonators and demonstrate experimentally a field-induced resonance wavelength shift. This process is due to both the DC Kerr effect and the plasma-dispersion effect. By means of finite element method simulations, these effects are properly modeled and their contributions are accurately disentangled. The strength of the equivalent second-order nonlinear coefficient that would have provided the same electro-optic effect is about 16 pm/V. This result is comparable with that of materials possessing an intrinsic second order nonlinearity, and is one order of magnitude stronger than the most recent measurements of strain-induced Pockels effect in silicon.

Highlights

  • The study of nonlinear optical phenomena received raising interest in the last decades [1]

  • A DC electric field is induced inside the waveguide

  • We study in detail the field-induced nonlinear processes in integrated silicon microresonators with lateral junctions. We study both the plasma-dispersion effect and the DC Kerr effect, which are processes that cause a variation of the effective refractive index of the resonator mode

Read more

Summary

INTRODUCTION

The study of nonlinear optical phenomena received raising interest in the last decades [1]. Field-Induced Nonlinearities in Silicon Waveguides would enable interesting phenomena like Pockels effect, Second Harmonic Generation (SHG) or Spontaneous Parametric DownConversion (SPDC) [1]. A recent work has demonstrated an alternative way to enable effective χ (2) processes in silicon by making use of silicon rib waveguides with lateral doping forming a p-i-n junction [18]. In this way, a DC (direct current) electric field is induced inside the waveguide.

MICRORING RESONATOR GEOMETRY
FIELD-INDUCED OPTICAL CHANGES
Modeling the System via Transfer Matrix Methods
The Effect of Doping on the Microresonator Losses
Modeling the Junction Breakdown
FIELD-INDUCED REFRACTIVE INDEX VARIATION
CONCLUSIONS

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.