Abstract
AbstractWe investigate the electron spin resonance (ESR) spectroscopy for the field-induced carriers in rubrene single-crystal field-effect transistors (SC-FETs), and compare the results with those on pentacene thin-film transistors (TFTs). We observe Lorentz-type ESR signal in rubrene SC-FETs whose linewidth is narrowed with increasing gate voltage and temperature. It demonstrates that the ESR linewidth is determined by motional narrowing effect as we reported on pentacene TFTs. Based on the observations, we discuss the multiple trap-and-release (MTR) processes in the two systems with and without grain boundaries.
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