Abstract
Electron transport and phonon dynamics in a GaAs-based $p$-$i$-$n$ nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at $T=80$ K. The time evolution of electron density, electron distribution, electron drift velocity, and LO-phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of $n\ensuremath{\cong}{10}^{17}$ cm${}^{\ensuremath{-}3}$, the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO-phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfactory agreement is obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
