Abstract
Charge storage characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals on tunnel oxide composed of Al2O3/HfO2/Al2O3 stacks in different thickness piling up sequences were investigated. A significant enhancement of charge injection efficiency for both electrons and holes without sacrificing charge retention performance was found in the sample with a relatively thicker (∼3 nm) Al2O3 sublayer adjacent to Au nanocrystals and a thinner (∼1 nm) Al2O3 sublayer in front of the Si substrate. It is attributed to the local enhancement of electric field induced by the embedded Au nanocrystals, which greatly modifies the effective barrier of tunnel oxide.
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