Abstract
Field-enhanced-generated leakage current characteristics and mechanisms of metal-induced laterally crystallized hydrogenated polycrystalline silicon thin-film transistors (TFTs) under the hot-carrier stress have been systematically investigated. Quite different characteristics are present in the forward and reverse modes after the hot-carrier stress. Finally, field-enhanced-generated leakage current mechanisms of polycrystalline silicon thin-film transistors under the hot-carrier stress are discovered in forward and reverse modes.
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