Abstract
Microfabricated field-emitter arrays are being investigated as a means for gating or prebunching electrons in a microwave amplifier tube. The goals of the program are to demonstrate 10-dB gain at 50 W and 10 GHz in a gated klystrode■ amplifier tube with 50% efficiency. The cathode specifications call for 160-mA peak emission at 10-GHz rates from an annular emitter array having a 600-μm outer diameter and an inner diameter to be determined by cathode capacitance, emitter-tip loading, and transconductance (Gm) considerations. We have shown that an average array capacitance of 6 nF/cm2 and emitter-tip loadings of 10 μA/tip can be routinely achieved with Gm≊1 μS/tip. Calculations based on these results show that an array having 0.4-μm-diam gate apertures on 1-μm centers, a 600-μm outer diameter, and a 560-μm inner diameter would be a reasonable first design to meet the tube specifications. Such an array would have a predicted capacitance of 2.18 pF, a peak Gm of 29.4 mS, and would produce a peak emission of 160 mA with a tip loading of 4.4 μA/tip. The power dissipated in driving the gate at 10-GHz rates would be between 0.1 and 1.0 W.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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