Abstract
Densely distributed bamboo-shaped nitrogen-doped aligned carbon nanotubes, grown on silicon substrate by thermal decomposition of monoethanolamine/ferrocene mixtures at 900 ∘C, were investigated for field electron emission. The morphology and crystallinity of the as-grown carbon nanotubes were characterized by SEM, TEM and Raman spectroscopy. X-ray photoelectron spectroscopy was used to analyze the nitrogen concentration on carbon nanotubes and it was observed that nitrogen concentration on nanotubes was 6.6 at.%. Field emission study of as-grown nitrogen-doped carbon nanotubes suggests that they are good emitters with a turn-on and threshold field of 1.8 V/μm and 2.53 V/μm, respectively. The maximum current density was observed to be 6 mA/cm 2 at 3 V/μm. It is considered that the nice field emission performance of CN x nanotube is due to the presence of lone pairs of electrons on nitrogen atom that supplies more electrons to the conduction band.
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