Abstract
Field emission property of aligned and random SiC nanowires arrays synthesized by a simple vapor–solid reaction was investigated, respectively. A better field emission property with a turn-on field of ∼10.5 MV/m for oriented nanowires array was obtained while the higher value of ∼29.5 MV/m for disordered nanowires array was received. After comparison, highly aligned and high-quality SiC nanowires with high aspect ratio contributed the better field-emitting property.
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