Abstract
The globe-like diamond microcrystalline aggregate films were fabricated by microwave plasma chemical vapor deposition (MPCVD) method and the field emission properties were investigated using a diode structure in vacuum. It was found that the films had a complex structure with globe-like microcrystalline diamond aggregations grown on the a-C surface and these films exhibited good electron emission properties and stability. The turn-on field of 1.1 V/μm and the current density of 6.6 mA/cm2 were obtained for these diamond microcrystalline aggregate films at the electric field of 2.73 V/μm.
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