Abstract
The electron emission properties of self-shield W tips were studied by field emission microscopy and spectroscopy. Self-shielded tips were formed by focused ion beam milling an annular depression on the apex of an electrochemically etched W〈111〉 tip. The resultant tip structure consists of a flat bottomed crater (the outer rim of which forms the shielding electrode) with a central protrusion (the emitter). In situ processing consisted of moderate thermal flashing and partial buildup. Significantly greater angular emission current densities were measured, as compared to both unshielded W〈111〉 built-up tips and standard W〈310〉 tips. Energy analysis of the emitted electrons showed no deviations from normal W〈111〉 emission. Self-shielding may offer a generally applicable method for increasing the brightness of field emission sources in a variety of electron optical instruments.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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