Abstract
Electrical properties of low-threshold field emission cathodes produced by growth nanocluster graphene films on the pointed surface of heavily doped n +SiC by sublimation epitaxy have been considered. The quality of the graphene coating has been assessed based on the morphological studies and Raman spectroscopy. Using the volt–ampere characteristics the work function from a pointed cathode with graphene coating was calculated (∼ 0.76 eV). Such a low value of the work function is explained on the assumptions that the graphene film has the nanocluster nature and the sources of the field emission are graphene nanoclusters.
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