Abstract
AbstractThe field emission properties of gallium oxide nanowires grown by thermal evaporation–deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined for Sn doped nanowires. X‐ray photoelectron spectroscopy measurements have been performed to calculate the work function of Sn doped Ga2O3. The results show improved field emission properties of Sn doped Ga2O3 nanowires, with a lower threshold field (below 1.0 V/µm). The obtained values are competitive with those achieved in other nanostructured materials, including carbon nanotubes.
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Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
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