Abstract
Silicon nanocone arrays are formed on porous silicon substrates by plasma etching in a hotfilament chemical vapour deposition system. The as-formed Si nanocones werecharacterized by means of scanning electron microscopy, high resolution transmissionelectron microscopy, energy dispersive x-ray analysis, and Raman spectroscopy. The resultsindicate that the nanocone is composed of a silicon core coated with a thin amorphouscarbon (a-C) layer produced by carbon-bearing plasma etching. Plasma etching is a keyfactor in the formation of the nanocone arrays, while re-condensation of evaporated siliconatoms on the tip of the as-etched cone also occurs. Field emission measurementsshow that the a-C coating can effectively enhance the field emission ability of thenanocone arrays due to the decrease of the surface work function from 4.15 to 2.37eV.
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