Abstract
This paper reports the characteristic field emission (FE) properties of single-walled carbon nanotubes (SWNTs) synthesized on the inside pores of a porous silicon (PS) substrate, as well as on the top surface of a PS substrate. Their turn-on fields and emission current densities are measured and compared with those of other types of SWNTs in similar environments. Investigation of field emission properties of single-walled carbon nanotubes (SWNTs) synthesized on the inside pores of a porous silicon (PS) substrate reveals a low turn-on field of about 2.25 V μm−1 at 10 μA/cm2 and a high field-enhancement factor (6182) compare with other samples. A life time stability test is performed by monitoring the current density change before and after repeated exposure to O 2 , suggesting that the pore channel can effectively prevent O 2 + ion etching from destroying the SWNTs within the pores of the PS layer.
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