Field emission properties of a-C and a-C:H films deposited on silicon surfaces modified with nickel nanoparticles**Project supported by the National Natural Science Foundation of China (Grant No. 51105186).

Abstract

The a-C and a-C:H films are deposited on silicon surfaces modified with and without nickel nanoparticles by using mid-frequency magnetron sputtering. The microstructures and morphologies of the films are analyzed by Raman spectroscopy and atomic force microscopy. Field emission behaviors of the deposited films with and without nickel nanoparticles modification are comparatively investigated. It is found that the hydrogen-free carbon film exhibits a high field emission current density and low turn-on electric field compared with the hydrogenated carbon film. Nickel modifying could increase the current density, whereas it has no significant effect on the turn-on electric field. The mechanism of field electron emission of a sample is discussed from the surface morphologies of the films and nickel nanoparticle roles in the interface between film and substrate.