Field Emission Properties and Fabrication of CdS Nanotube Arrays.

Xuemin Qian,Yinglin Song,Yanbing Guo,Shiqun Zhu,Huibiao Liu,Yuliang Li

doi:10.1007/s11671-009-9324-8

Abstract

A large area arrays (ca. 40 cm2) of CdS nanotube on silicon wafer are successfully fabricated by the method of layer-by-layer deposition cycle. The wall thicknesses of CdS nanotubes are tuned by controlling the times of layer-by-layer deposition cycle. The field emission (FE) properties of CdS nanotube arrays are investigated for the first time. The arrays of CdS nanotube with thin wall exhibit better FE properties, a lower turn-on field, and a higher field enhancement factor than that of the arrays of CdS nanotube with thick wall, for which the ratio of length to the wall thickness of the CdS nanotubes have played an important role. With increasing the wall thickness of CdS nanotube, the enhancement factorβdecreases and the values of turn-on field and threshold field increase.

Highlights

One-dimensional semiconductor nanostructures have been intensively investigated in recent years due to their interesting optical and electronic properties, and promising applications in nanoscale devices [1,2,3]
A large area of CdS nanotube arrays on silicon wafer is successfully fabricated by the method of layer-bylayer deposition using well-aligned ZnO nanorod arrays as removable templates
The results indicate that the field emission (FE) properties of CdS nanotube arrays can be Nanoscale Res Lett (2009) 4:955–961 controlled through changing the wall thicknesses of CdS nanotubes

Summary

Introduction

One-dimensional semiconductor nanostructures have been intensively investigated in recent years due to their interesting optical and electronic properties, and promising applications in nanoscale devices [1,2,3]. A large area of CdS nanotube arrays on silicon wafer is successfully fabricated by the method of layer-bylayer deposition using well-aligned ZnO nanorod arrays as removable templates.

Results

Conclusion