Abstract
The application of an array of individually light switched cold field emitters in electron beam lithography is described. In the 1970s, extensive investigations of the field emission photocathode were performed [IEEE Trans. Electron Dev. ED-21 (1974) 785]. The emission of these emitters is much more stable than conventional cold field emitters. Quantum efficiencies of more than 1 electron per photon have been observed, which is high compared to normal photo emitters. Another advantage compared to photo emitters is that small sources can be made, without limiting the photon detection area. These properties make the Field Emission Photocathode Array a powerful device for multibeam electron lithography. It can be used as a modulated electron source as well as a continuous electron source. In the Multiple Aperture Pixel by Pixel Enhancement of Resolution, or MAPPER, concept the array can be used as a converter plate. The light sensitivity of the emitters is such that a few tens of milliwatts LASER power should be sufficient to obtain a throughput of 60 wafers per hour.
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