Abstract
The distribution of field emitting sites on polycrystalline diamond films at electrical surface fields has been investigated between 2.5 and 150 MV/m by means of a field emission scanning microscope with μm resolution. For the first time field emission scans were performed on broad-area (≊cm2) diamond cathodes with in situ scanning electron microscope analysis of the localized sites. The 2–3-μm-thick diamond films were chemical-vapor deposited on Mo substrates by the hot-filament technique. Undoped and p-type boron-doped films with low content of sp2-bonded carbons were studied. The highest emitter density of ∼2000/cm2 at 100 MV/m was detected on undoped diamond surfaces. A preliminary study of localized emitters indicated both sporadic particles of foreign materials at the emitting sites as well as intrinsic emission from diamond. In addition, the Fowler–Nordheim parameters β and S, the elemental composition, and the current stability of localized emitters were measured.
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