Abstract
Nanostructural zinc oxide pins have been fabricated by vapor transport on copper-coated silicon wafer. The nanopins are composed of hexagonal wurtzite-phase zinc oxide with single crystal quality. The growth process includes two steps: (1) growth of a micron-sized zinc oxide dot on the substrate and (2) growth of a sharp tip from the zinc oxide dot. The field emission of the nanopins shows a low field emission threshold (1.92 V/μm at a current density of 0.1 μA/cm−2) and high current density with a field enhancement factor of 657. The emission current density and the electric field follow Fowler–Nordheim relationship. The good performance for field emission is attributed to the single-crystalline structure and the nanopin geometry.
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