Abstract
Summary form only given. We have been working for several years on field emission from hafnium carbide and zirconium carbide. These studies have covered emission from solid carbide emitters as well as thin film carbide overcoatings on single tip field emitters and field emitter arrays. These materials are attractive candidates for low voltage microelectronic field emitter arrays. Uses for arrays or single emitters of these carbides include microwave applications, video displays, high current, small spot electron sources, and cold cathodes for operation in poor vacuums. Since molybdenum is one common FEA emitter material we used it in this study. Our aim is to determine improvements in I-V characteristics, emission stability, capability of emission at high currents and in poor vacuum conditions, and the ability to withstand exposure to atmospheric pressure without degradation. Mo FEAs as well as individually fabricated Mo field emitters were dosed via PVD from a high-purity ZrC source. The deposited film was followed by determination of I-V characteristics. The results of these experiments indicate that work function reductions of the order of 1 eV can be achieved.
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