Abstract
Field emission characteristics were measured for phosphorous-doped homoepitaxial diamond films grown by microwave plasma assisted chemical vapor deposition. A variation in the turn-on voltage with cathode metals and various temperatures is observed for the sample with high electrical resistivity. This behavior of the turn-on voltage demonstrates that the internal electron emission at the diamond/metal contact influences field emission characteristics. A reduction in the turn-on voltage is found for the diamond film with low electrical resistivity.
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