Abstract

Graphene/hexagonal boron nitride (h-BN) was characterized. Field emission from graphene/h-BN/Si structure showed low threshold voltage and enhanced emission current. Fowler-Nordheim (F-N) plots were applied to discuss the obtained field emission properties. We also examined work function using ultraviolet photoelectron spectroscopy (UPS). The obtained data suggested that graphene modified work function and possibility of graphene field emitters

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