Abstract
Single crystal silicon field emitters have been modified by surface deposition of diamond using bias-enhanced microwave plasma chemical vapor deposition. Polycrystalline diamond with a high nucleation density (1010/cm2) and small grain size (<20 nm) was achieved on silicon field emitters. Field emission from these diamond coated emitters exhibited significant enhancement both in total emission current and stability compared to pure silicon emitters. A large effective emitting area comparable to the tip surface area was obtained from a Fowler–Nordheim analysis. The effective work function of the polycrystalline diamond coated emitter surface was found to be larger than that of a pure silicon emitter surface.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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