Field emission characteristics of CNTs synthesized by bias-assisted ICPHFCVD and ICPCVD techniques

Abstract

Carbon nanotubes (CNTs) were vertically well-grown on Ni/Cr-deposited glass substrates at 580 °C by ICPCVD and bias-assisted ICPHFCVD techniques. The vertically well-aligned CNTs showed multi-walled type with hollow structure. The measured critical current density on CNTs grown by the ICPCVD technique was 1.0×10−6 A cm−2 at 5 V μm−1 of turn-on field and 7.7×10−5 A cm−2 at 7.8 V μm−1 of the critical field. On the other hand, the critical current density on CNTs grown by the bias-assisted ICPHFCVD technique was 3.7×10−7 A cm−2 at 3 V μm of turn-on field and 3.3×10−4 A cm−2 at 6.8 V μm−1 of the critical field, respectively. On comparing the two processes, it can be concluded that CNTs grown by bias-assisted ICPHFCVD are more suitable than those grown by ICPCVD for the possible application of field emission displays (FEDs).