Abstract
AbstractField electron energy spectroscopy and density functional calculations have been employed to characterize electronic properties of single Pt‐adatoms deposited on a thin alumina film. For Pt/Al2O3/NiAl(110) strong current enhancements were measured about 1.4 eV below the Fermi energy. No features were observed for clean Al2O3/NiAl(110) and Pt/NiAl(110) in the accessible energy range. As an explanation we propose a resonance tunneling mechanism involving an occupied electronic state of the Pt adatom close to the Fermi level. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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