Abstract
Thin films and heterojunctions of Hf[Formula: see text]-doped LaMnO3manganite have been studied. The sole tetravalent state of Hf[Formula: see text] ensures formation of [Formula: see text]-type La[Formula: see text]Hf[Formula: see text]MnO3(LHMO) manganite. Photoinduced resistance was also observed as illuminated by visible light. The induced photoresistance (PR) could be greatly enhanced by the compressive strain. The LHMO/Nb-STO heterojunctions showed excellent rectifying characteristics, which are comparable with those [Formula: see text]-junctions of conventional semiconductors. Their transport properties are tunable electrically and magnetically. Such LHMO/Nb-STO heterojunctions have the potential to develop novel functional field-effect transistors based on manganite perovskites.
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