Field effects on electron conduction through self-assembled monolayers

Abstract

The electronic conduction through the self-assembled monolayer (SAM) can be modulated by the electric potential applied to the silicon gate electrode surrounding the SAM. The dependence of the current through SAM on the gate voltage can be explained that the renormalized molecular energy levels are swept through the window between the Fermi levels of the source and drain electrodes. The effects of the lowest unoccupied molecular orbital and a hybrid energy level near the Fermi level in the transmission spectrum can be identified.