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Abstract
Modulation of the metal-insulator phase transition of perovskite manganite oxides is achieved by a static electric field. The field is applied using a planar field-effect configuration, which was formed on a monolayer film. In such a field-effect configuration, La1−xAxMnO3 film is used as the channel and substrate acts as the gate. Both divalence-doped (La0.7Ba0.3MnO3, Pr0.7Sr0.3MnO3), and tetravalence-doped (La0.7Ce0.3MnO3) systems demonstrate significant field effects. The field modulations are found being nonlinear and polarity dependent on the applied bias. The results obtained in La0.7Ce0.3MnO3 indicates that electron doped manganites have similar features as those found in hole doped manganites. The observed field effects were discussed with the percolative phase separation picture.
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