Abstract
An analysis of high-field effects in semiconductor double-injection devices is presented. Exact and approximate numerical solutions are developed, which include the electric field dependence of carrier mobilities and capture coefficients. The model assumes that the current is entirely field driven and that charge neutrality applies. The current-voltage characteristics are obtained in the square-law and threshold voltage regions. A comparison is made between the present analysis and a previous, more approximate, analytical formulation which was similarly based on a modification of the square law. The validity of approximations made in the development of the models is discussed. The conditions, under which high-field effects have a significant influence on the current-voltage characteristics, are determined.
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