Field‐Effect Transistors as Sensors of Neural Systems

Abstract

In the analysis of the signal processing in small neural networks, the application of field-effect transistors as potential probes has led to significant progress. Recently Fromherz et al. were successful in growing neurons directly on a thin insulating layer of the gate-oxide on n-silicon (shown right). The changes in potential in the cell during an action potential via capacitative coupling have the same effect on the source–drain current as changes of tension on a metal gate. The goal of measuring electrical potentials in neuron cultures on one chip with resolutions of 1 μm or less has become feasible.