Abstract
We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V−1 s−1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W−1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.
Highlights
For a number of years, semiconductor nanowires (NWs) have been widely investigated for their potential deployment in future electronics and optoelectronics technologies [1]
Octahedral shaped NCs can be seen, which are the residues of the PbS seeds that did not take part in the oriented attachment process that formed the resultant NWs
In the high-resolution TEM (HRTEM) image depicted in figure 1(b), the {111} crystal planes are clearly observed and reveal the high degree of crystallinity of the as-prepared NWs
Summary
For a number of years, semiconductor nanowires (NWs) have been widely investigated for their potential deployment in future electronics and optoelectronics technologies [1]. There is still a need for a facile procedure for fabricating p-type NWs that result in good device performance metrics such as large majority carrier field effect mobility and large ON to OFF current ratios.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
