Abstract
The field-effect transistors (FETs) with 2,4,5-trichlorobenzene sulfonic acid (TCBSA) -doped polyaniline (PANI) and undoped polyaniline films as p-type semiconductor are fabricated. These FETs have ideal source current-drain voltage characteristics and their performances depend strongly on the materials for source and drain electrodes, the content of 1-methyl-2-pyrrolidone (NMP) in the PANI films, the doping level and the ambient environment.
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