Abstract
Trigonal Se nanowires (NWs) were fabricated through a high-yield chemical solutionprocess. The morphology and structural characterization of the Se NWs were investigatedusing transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and x-raydiffraction (XRD). The results indicated that the Se NWs grow along the crystallographicc-axis, the direction of which is parallel to the helical chains of Se atoms. Single Se NW field effecttransistor (FET) devices were prepared through photolithographic patterning. The deviceperformance shows that the Se NWs are p-type semiconductors displaying mobility up to30 cm2 V−1 s−1. This finding on the Se NW FETs has broad implications and provides very usefulfundamental information necessary for future applications in the fabrication of high-qualityNW FETs and other electronic devices.
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