Abstract
Field-effect transistors with n- and p-types of the channel on the base of ZnO:Li oxide films and MgF2 fluoride film as a gate insulator were prepared. The field effect as well as the UV radiation influence on the field effect in ZnO:Li thin films were investigated. Photoelectric characteristics of the obtained thin-film field-effect transistors were studied. A mechanism of photoelectric amplification in the obtained transistors is proposed.
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Schedule a callMore From: Journal of Contemporary Physics (Armenian Academy of Sciences)
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