Abstract
Field effect experiments were performed on silicon to evaluate the characteristics of etched and thermally oxidized surfaces. The majority of the experiments were performed at 100°C in order to eliminate the effects of the low density of minority carriers at room temperature. An observed lack of a unique minimum of conductance for thermally oxidized silicon surfaces is reported and discussed. The effect of a high transverse electric field on conductance of thermally oxidized surfaces is discussed. This high electric field effect is the opposite of what one would expect from surface state shielding. A model to account for these effects is presented. The equilibrium surface potentials and fast state energy distributions of etched surfaces are presented. Room temperature field effect on silicon is discussed.
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