Abstract

In this study, we demonstrate the substantial enhancement of the thermoelectric power factors of silicon nanowires (SiNWs) on plastic substrates achievable by field-effect modulation. The Seebeck coefficient and electrical conductivity are adjusted by varying the charge carrier concentration via electrical modulation with a gate voltage in the 0 to ±5 range, thus enhancing the power factors from 2.08 to 935 μW K−2 m−1) for n-type SiNWs, and from 453 to 944 μW K−2 m−1) for p-type SiNWs. The electrically modulated thermoelectric characteristics of SiNWs are analyzed and discussed.

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