Abstract

For advancing the developemt of mono lithic microwave integrated circuits (MMICs), field effect controlled fransferred electron de vice (FECTED) combined with the design of coplanar waveguide have been proposed. In order to match the external circuits and mini mize the energy loss, we designed a coplanar wave guide with 50 /spl Omega/ characteristic i-mpedance. The device is design to have ohmic cathode contact, Schottky gate and anode contact over the epilayer(s) of a semi-insulating GaAs wafer. The results show that the device with single epilayer will have negative differential resistance (NDR) in the I-V characteristic curve. It is observed that the I-V curve will have two NDR region if the active layer contained two n-type GaAs epilayers.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.