Field effect as a method for controlling the quality of i-InP-based heteronanostructures with two-dimensional electron gases

Abstract

The field effect in i-InP-based heteronanostructures has been studied in InP and In0.52Al0.48As layers with an In x Ga1−x As quantum well with a high Hall electron mobility in the frequency range of (20−2) × 106 Hz and temperature range of 77–450 K. It is shown that mobility in the field effect depends on the location of Si δ-doped areas with respect to the quantum well and on the doping level. The δ-doping level and the configurations of nanostructures have been determined for the case in which the values of the electron mobility in the field and Hall effects are close to each other and correspond to high values of mobility in the quantum well.