Field-driven Modulation of Spin Hall Magnetoresistance in Nanoscale-layered Pt/IrMn₃/NiFe Heterostructures

Abstract

Spin Hall magnetoresistance (SMR) emerges from both spin Hall effect (SHE) and inverse spin Hall effect (ISHE), which is usually investigated in a nonmagnetic heavy metal (NM) in contact with a ferromagnet (FM). Depending on the orientation of FM magnetization and spin polarization of NM layer, the transmission or reflection of the spin current at the FM\NM interface could occur. SMR was investigated in 1.5 nm NiFe\3.0 nm IrMn₃\3.0 nm Pt magnetic heterostructures. IrMn₃ thin film grown on ferromagnetic NiFe layer exhibits the glassy magnetic behavior and displays spin reorientation transition in the magnetic field-temperature space. Below the Néel temperature of IrMn₃, the angle dependence of MR measurement in the xy and xz plane showed a normal positive SMR. However, a sign change in SMR was observed in the magnetic field applied in the yz plane. The switching from negative to positive SMR occurs at the field above a critical value of 6 kG. Our results provide a potential advantage for the source of spin flow in the signal in multilayer heterostructures and highlight the importance of magnetic structure (Néel vector) in AF, which opens the possible way to manipulate the spin current transportation and AF memory devices.