Abstract
The nature of resistive transition of high-quality crystalline thin films of YBa2Cu3O7−δ has been studied under magnetic fields (H) applied along the c direction over a wide range of doped holes, p in the CuO2 planes. The field- and temperature-dependent in-plane resistivity, ρ ab(T, H), has been analyzed within the thermally assisted flux-flow (TAFF) formalism. The flux activation energy, U(T, H), has been extracted from this analysis. The low-T part of the ρab(T, H) data can be described by an activation energy having the functional form of U(T, H) = (1-t)m(H0/H)−β, where t=T/Tc (reduced temperature), and H0 is a field scale that primarily determines the magnitude of U(T, H). The temperature exponent, m, shows a systematic variation with p, whereas the field exponent, β , is insensitive to the p values and is close to unity. The H0, on the other hand, changes rapidly as p is varied. U(T, H) is linked to the pinning potential and consequently on the superconducting condensation energy. Since the normal state pseudogap directly affects superconducting condensation energy, a clear correspondence between H0 and the PG energy scale, ɛg, is found. Possible implications of these results are discussed.
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