Abstract
The ionizing radiation effects in w-channel lightly doped drain (LDD) MOS transistors are evaluated for a wide range of gate fields applied during irradiation. Various device parameters, such as threshold voltage, transconductance, interface state density and drain leakage current are measured before and after irradiation. It is seen, that, unlike single drain devices, the maximum threshold voltage shift for LDD devices occurs with negative bias applied during irradiation. The threshold voltage shift increases with a decrease of channel length of the device. The drain leakage current decreases with irradiation and the decrease is proportional to the increase of trapped carrier density in the oxide region.
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