Abstract
The preswitching exponential increase of dark conductivity with field observed in many chalcogenide glasses can be identified with either a change in the free-carrier concentration or a change in the carrier mobility. Small-signal photoconductance measurements on thin films of amorphous Te40As35Si15Ge7P3 in the field-activated regime indicate that it is the carrier concentration which increases exponentially with applied field. In addition, studies of variations in switching parameters introduced by intense electron irradiation suggest that a critical degree of carrier trapping is not a precursor to threshold switching. Both the photoconductivity and the electron-irradiation results indicate a very short carrier lifetime in these films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
