Abstract
The trap properties of the commonly used organic light-emitting diode emitter material tris-8-(hydroxyquinoline) aluminum (Alq3) have been investigated using thermally stimulated currents. Based on a model of the field dependence of the thermally stimulated currents, a trap density of 1.3×1017 cm−3 for depths ranging from 0.05 to 0.7 eV is obtained, indicating considerable influence on charge carrier statistics. A field-induced lowering of trap depth was observed and explained in the framework of the Poole–Frenkel effect.
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