Field Dependence of Photoresponse in Germanium Bicrystals

Abstract

Measurements of the photoresponse of germanium bicrystals are reported here with two specific results in mind: (1)The detailed response at higher optical frequencies. The measured transition steps at larger than band gap energies can be associated with the specific band structure of the dislocation plane taking the stress field into consideration. (2) The detailed bias or field dependence yields a linear law for the photovoltage. It is found that the electronic dislocation model, as used earlier, explains the linear field dependence of the photoresponse.