Field-assisted thermally stimulated current of mobile ions in a dielectric layer of a metal–oxide–semiconductor structure

Abstract

A field-assisted thermally stimulated ionic current method has been used to investigate the transient currents associated with mobile ions in dielectric layers of metal-oxide-semiconductor (MOS) structures. Assuming Poole–Frenkel effect, an interface trapping model has been used to analyze J–V curves. Using a ramp voltage, analytic expressions for normalized J–V curves are obtained. The single energy model and distributed energy model have been analyzed. The most probable trapping depth of mobile ions, attempt-to-escape frequency and trapping energy distribution of mobile ions may be determined from J–V curves. The experimental results are consistent with theoretical calculations.