Fiber-Shaped Triboiontronic Electrochemical Transistor.

Jinran Yu,Xiaoxiao Zhu,Yichen Wei,Huai Zhang,Qijun Sun,Shanshan Qin,Ya Yang

doi:10.34133/2021/9840918

Abstract

Contact electrification-activated triboelectric potential offers an efficient route to tuning the transport properties in semiconductor devices through electrolyte dielectrics, i.e., triboiontronics. Organic electrochemical transistors (OECTs) make more effective use of ion injection in the electrolyte dielectrics by changing the doping state of the semiconductor channel. However, the mainstream flexible/wearable electronics and OECT-based devices are usually modulated by electrical signals and constructed in conventional geometry, which lack direct and efficient interaction between the external environment and functional electronic devices. Here, we demonstrate a fiber-shaped triboiontronic electrochemical transistor with good electrical performances, including a current on/off ratio as high as ≈1286 with off-current at ~nA level, the average threshold displacements (Dth) of 0.3 mm, the subthreshold swing corresponding to displacement (SSD) at 1.6 mm/dec, and excellent flexibility and durability. The proposed triboiontronic electrochemical transistor has great potential to be used in flexible, functional, and smart self-powered electronic textile.

Highlights

Contact electrification-activated triboelectric potential, which can be readily generated from a triboelectric nanogenerator (TENG), offers an efficient way to tuning the transport properties in semiconductor devices and artificial afferents [1]
Schematic illustration of the self-powered electronic cloth based on a fiber-shaped triboiontronic electrochemical transistor is depicted in Figure 1(a), which contains two primary components: a fiber-shaped organic electrochemical transistors (OECTs) based on PEDOT:PSS
The 90 wt% ion gel is further prepared to cover on the PEDOT:PSS channel to improve the gating efficiency

Summary

Introduction

Contact electrification-activated triboelectric potential, which can be readily generated from a triboelectric nanogenerator (TENG), offers an efficient way to tuning the transport properties in semiconductor devices and artificial afferents [1]. To explore more extensive research and development, further improvements on the gating efficiency of triboelectric potential by effectively coupling TENG and transistor device have become urgent so as to enhance the electrical properties of tribotronic transistors. The dielectrics in the transistor act as the critical capacitive layer and provide a valid approach on the modulation of gating properties. E.g., ion gels, are preferred to be used as gate insulator materials in field effect transistors.

Methods

Results

Conclusion